FEATURES

. Fast Access Time 10ns(Max.)
. Low Power Dissipation
  Standby (TTL) : 20mA(Max.)
              (CMOS) : 5mA(Max.)
  Operating K6R4008C1D-10 : 65mA(Max.)
. Single 5.0V¡¾10% Power Supply
. TTL Compatible Inputs and Outputs
. Fully Static Operation
- No Clock or Refresh required
. Three State Outputs
. Center Power/Ground Pin Configuration
. Standard Pin Configuration
   K6R4008C1D-J : 36-SOJ-400
   K6R4008C1D-K : 36-SOJ-400(Lead-Free)
   K6R4008C1D-T : 44-TSOP2-400BF
   K6R4008C1D-U : 44-TSOP2-400BF(Lead-Free)
. Operating in Commercial and Industrial Temperature range.

GENERAL DESCRIPTION

The K6R4008C1D is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
K6R4008C1D uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG¡Çs
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R4008C1D is packaged
in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.